Optimization of PbS colloidal quantum dots-based near-infrared photodetectors using pentacene

Lead sulfide colloidal quantum dots ( PbS CQDs) offer the unique advantages of tunable bandgap, cost-effectiveness, and ease of processing. These characteristics make PbS CQDs an ideal candidate for the development of near-infrared (NIR) photodetectors, with promising applications in diverse fields such as fiber optic communication, biomedical imaging, and national defense. In this study, NIR photodetectors employing indium gallium zinc oxide (IGZO) as the carrier conductive layer, PbS CQDs as the photosensitive layer, and pentacene as the functional enhancement layer are fabricated and systematically studied. Comparative analysis unveiled That the p-type semiconductor property of the pentacene is leveraged to increase the photoresposne of the PbS CQDs-IGZO NIR photodetectors. This work not only sheds light on the structural advancements of photosensitive field-effect transistors but also provides valuable insights into optimizing their performance.