Pinpointing Lattice-Matched Conditions for Wurtzite ScxAl1-xN/GaN Heterostructures with X-Ray Reciprocal Space Analysis

Using comprehensive x-ray reciprocal space mapping, we establish the precise lattice-matching composition for wurtzite ScₓAl₁₋ₓN layers on (0001) GaN to be x = 0.14+/-0.01. 100-nm thick ScₓAl₁₋ₓN films (x = 0.09 - 0.19) were grown in small composition increments on c-plane GaN templates by plasma-assisted molecular beam epitaxy. The alloy composition was estimated from the fit of the (0002) x-ray peak positions assuming the c-lattice parameter of ScAlN films coherently-strained on GaN increases linearly with Sc-content determined independently by Rutherford Backscattering Spectrometry. Reciprocal space maps obtained from high-resolution x-ray diffraction measurements of the (10-15) reflection reveal that ScₓAl₁₋ₓN films with x = 0.14+/-0.01 are coherently strained with the GaN substrate while the other compositions show evidence of relaxation. The in-plane lattice-matching with GaN is further confirmed for a 300-nm thick Sc0.14Al0.86N layer. The full-width-at-half-maximum of the (0002) reflection rocking curve for this Sc0.14Al0.86N film is 106 arcseconds and corresponds to the lowest value reported in the literature for wurtzite ScAlN films.