Variational Mapping of Chern Bands to Landau Levels: Application to Fractional Chern Insulators in Twisted MoTe₂

We present a theoretical study of mapping between Chern bands and generalized Landau levels in twisted bilayer MoTe₂, where fractional Chern insulators have been observed. We construct an exact Landau-level representation of moir\'e bands, where the bases are derived from Landau-level wavefunctions dressed by spinors aligned or antialigned with the layer pseudospin skyrmion field and maintain uniform quantum geometry. We further generalize the dressed zeroth Landau level to a variational wavefunction with an ideal yet nonuniform quantum geometry and variationally maximize its weight in the first moir\'e band. The variational wavefunction quantitatively reproduces the exact diagonalization spectra of fractional Chern insulators at hole-filling factors νₕ=2/3 and $3/5$ across a large twist-angle range. Our work introduces a new approach to studying fractional states by bridging the gap between Chern bands and Landau levels.