D2W Hybrid Bonding System Achieving High-Accuracy and High-Throughput With Minimal Configurations

The effectiveness of a new D2W hybrid bonder achieving 2200 UPH and 100-nm alignment accuracy is validated based on the fact that multiple chips are bonded even when the duration after plasma activation is fixed. Our hybrid bonding is characterized using Positron Annihilation Spectroscopy (PAS), Double Canti-lever Beam Method (DCBM) test, and TEG chips with Kelvin patterns to evaluate the electrical properties of Cu-Cu single joints/daisy chains. We confirm that excellent electrical properties are obtained from optimized Cu-CMP, pretreatment processes, including dicing, cleaning and plasma activation, and bonding conditions.