Development of Double Cantilever Beam Technique for Wafer-to-Wafer Bond Energy Measurement

This paper presents a systematic study on the development of Double Cantilever Beam (DCB) technique for Wafer-to-Wafer (W2W) bond energy (BE) measurement. The effect of dicing during DCB sample preparation on W2W bonding strength was investigated. The success rate of DCB test and 4-point bend (4PB) test on measuring W2W BE was compared. The DCB test was successfully applied to measure the bond energy of fusion bond (dielectric film bonded to dielectric film) and hybrid bond (dielectric/metal bonded to dielectric/metal) to guide bonding film selection, and bonding/Post Bond Anneal (PBA) process development. The advantages of DCB test on W2W BE measurements are demonstrated and summarized in the paper. The DCB test is expected to find more applications in W2W bonding.