In this report, a new bump-less interconnect process for chip stacking with high throughput is proposed. We developed polymer-based adhesive MA-0208 for bonding and the solder bump can be embedded by coating MA-0208. It can be pre-bonded against itself and SiO <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> at room temperature even after curing process. In this work, we demonstrated the bump-less interconnect process with MA-0208. The top chip with flat bonding surface consists of solder and MA-0208 was stacked to the bottom chip composed of SiO <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> and Cu at room temperature for 1 second pressing. After thermal compression bonding process, permanent bonding of MA-0208 to SiO <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> and solder to Cu were achieved, and good electrical connection was obtained.
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Okada et al. (2024) studied this question.
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