⌘+K

Pulse Explore Communities Researchers Journals

Home Communities Explore

May 28, 2024Nanotechnology

Improved high voltage operation of amorphous In-Ga-Zn-O thin film transistor by carrier density enhancement

HyoungBeen Ju Jiyoung Bang Hyeonjeong Sun Yeonghun Lee Sangduk Kim Seung‐Min Choi Youngsoo Noh Hyo Won Kim Eunsuk Choi Jae Kyeong Jeong Seung‐Beck Lee

View Full Paper

Ask AI

Bookmark

Share

Abstract

We report on improved high voltage operation of amorphous-In-Ga-Zn-O (a-IGZO) thin film transistors (TFTs) by increasing carrier density and distributing the high bias field over the length of the device which utilizes an off-set drain structure. By decreasing the O

Discussion

No takes yet. Share an insight, caveat, or question.

Cite This Study

Ju et al. (2024) studied this question.

synapsesocial.com/papers/68e68219b6db64358760ad0d https://doi.org/10.1088/1361-6528/ad50df

View Full Paper

Ask AI

Bookmark

Share

Keep reading

Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context:

1Ga2O3-Engineered Buried-Channel Transport in Amorphous IGZO Thin-Film Transistors with Improved Mobility and Reliability for DRAM Cell ApplicationsOriginal Research · 2026
2Tri‐Layer Heterostructure Channel of a‐IGZO/a‐ITZO/a‐IGZO Toward Enhancement of Transport and Reliability in Amorphous Oxide Semiconductor Thin Film Transistors2024 · 25 citations
3Process‐Driven Enhancement of Contact and Reliability Characteristics in Self‐Aligned Top‐Gate In–Ga–Zn–O Thin‐Film Transistors via Overetching and Ultrathin SiO <sub>2</sub> InterlayersOriginal Research · 2026
4Enhancing the Carrier Mobility and Bias Stability in Metal–Oxide Thin Film Transistors with Bilayer InSnO/a-InGaZnO Heterojunction Structure2024 · 14 citations
5High-Voltage Amorphous InGaZnO Thin-Film Transistors With ITO-Modulated Offset Region2024 · 10 citations