High RF-high power dual capacitively coupled plasma characteristics dependency on process parameters: a finite element analysis approach

To address limitations related to panel level plasma dry etching, a study combining simulation and experiment is designed. Plasma etch uniformity control in dual capacitively coupled plasma (CCP) etching system is investigated. Dual CCP is represented by a finite element model of a high frequency-high power combination. Electron density at the panel surface calculated in the simulation agrees with Ar plasma dot experiment, which suggests that highest density point shifts towards panel edge when the RF power is increased. The simulation results can be used to direct experimental study where plasma density, etch rate, and etch profile are measured across a panel to increase end of line yield in substrate manufacturing.