PulseTrendingJournal ClubResearchersJournalsExplore
Instagram
HomeTrendingJournal ClubExplore
Synapse
⌘+K
Synapse
May 27, 2024IEEE Transactions on Electron Devices

Design Technology Co-Optimization for Gate-All-Around Nanosheet Transistors Considering Source/Drain Confinement and Post-Gate Single Diffusion Break

View Full Paper
Ask AI
Bookmark
Share

Authors

DWDawei WangTLTao LiuXSXin Sun

Discussion

Loading...

Member takes

Overview

Key Points

Key points are not available for this paper at this time.

Cite This Study

Wang et al. (2024) studied this question.

synapsesocial.com/papers/68e68371b6db64358760c563https://doi.org/10.1109/ted.2024.3403794
View Full Paper
Ask AI
Bookmark
Share

Also Consider

Synapse has enriched one closely related paper. Consider it for comparative context:

  1. 1Investigation of Source/Drain Recess Engineering and Its Impacts on FinFET and GAA Nanosheet FET at 5 nm Node2023 · 21 citations