Excellent temperature dependence of retention energy and large tunnel magnetoresistance of MTJs with strain-induced magnetic anisotropy for SOT-MRAMs with high write efficiency

Temperature dependence of retention energy of MTJs with strain-induced magnetic anisotropy(SIMA-MTJs) were estimated by performing repeated measurements on the coercivity of the storage-layer and fitting the switching probability data obtained from them with Sharrock's formula. The retention energy of SIMA-MTJs at 85°C increased by 14% compared with that at room temperature on average. Also, over 300% of tunnel magnetoresistance(TMR) was demonstrated with 1.9nm thick storage-layer. Further, it was estimated that the switching current for 1.9nm thick storage-layer can be lowered to the level of 20μA with retention energy of 80k B T by practically available values of interface magnetic anisotropy, K s =1.6 erg/cm 2 , and spin-Hall angle of 0.3.