Drag of electron–hole bilayer in silicon-on-insulator metal-oxide-semiconductor field-effect transistor at low temperature

Drag between the electron and the hole layers formed in a silicon-on-insulator MOSFET, with the estimated interlayer distance as small as 18 nm, is investigated. The drag resistance is measured at 10 K and mapped on the plane defined by the electron and hole densities. Analysis shows that the Coulomb drag predominates over the competing virtual-phonon drag. The observed drag resistance is as large as 10 3 -10 4 Ω, indicating strong Coulomb interaction between the electron and hole layers.