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May 23, 2024Materials Today NanoOpen Access

Ferroelectric behavior arising from polar topologies in epitaxially strained SrTiO3-δ ultrathin films

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Authors

TRTiago RodriguesJSJosé SilvaFFF. Figueiras

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Overview

Microscopy analysis demonstrates ferroelectric behavior from polar topologies in strained SrTiO3-δ films, highlighting opportunities for sub-10 nm non-volatile memory devices.

Key Points

  • Epitaxially strained SrTiO3-δ thin films exhibit ferroelectric behavior driven by oxygen vacancies that induce non-trivial polar topologies.
  • Measurements detect a maximum polarization of ∼1.5 μC/cm2 and a remnant polarization of ∼0.4 μC/cm2 within polar nanoregions across the film.
  • High-angle annular dark-field scanning transmission electron microscopy identifies strained polar topologies, highlighting potential for non-volatile memory devices.

Cite This Study

Rodrigues et al. (2024) studied this question.

synapsesocial.com/papers/68e68bf8b6db643587613a79https://doi.org/10.1016/j.mtnano.2024.100486
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Also Consider

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