Superhigh gain InGaN/GaN visible-light photodetector using polarization heterointerface barrier and single-carrier superlattices

Visible-light detection with high sensitivity and strong wavelength selectivity is highly desired in emerging applications. Here, we demonstrate a high-performance visible-light photodetector with an active region composed of a polarization induced barrier and single-carrier superlattices (SCSLs). The barrier at SCSLs/GaN heterointerface brings both a low dark current and a high gain originating from the photoinduced barrier reduction effect. Meanwhile, the designed InGaN/GaN SCSLs allow the photoelectrons in the quantum wells to escape, but photogenerated holes are weakly localized, thus generating the additional photoconductive gain. The resulting devices exhibited a super-high gain of 7.8 × 10