The aim of this paper is to develop an analytical model of a single and two parallel configuration silicon carbide power MOSFETs utilizing the state-space equations to offer a straightforward solution with reduced computational efforts, still maintaining high accuracy. The analytical model of each single power device is directly obtained from technical specifications. Although the main target is to investigate the unbalanced phenomena in paralleled SiC devices, the proposed approach additionally provides a practical model for testing electric drive configurations, control strategies and fault tolerant drives. The analytical model has been validated through simulation implemented in Matlab/Simulink, comparing transient commutation and computational times with SPICE models.
No takes yet. Share an insight, caveat, or question.
Tornello et al. (2024) studied this question.
Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context: