Design Consideration of an Isolated Gate Driver With Discrete Miller Clamp for Parallel Medium-Voltage SiC MOSFET Modules

As electricity generators from renewables become larger and more powerful, medium-voltage architectures play an increasingly important role in future power electronics systems. To further enhance the power-handling capacity, the implementation of parallel connections of Silicon Carbide (SiC) MOSFETs has gained widespread interest. However, it is important to note that the gate-loop performances of medium- and low-voltage modules are significantly different. Therefore, this paper presents a gate driver with discrete Miller clamp for parallel 10 kV SiC MOSFET modules and provides design considerations for future engineering reference.