What question did this study set out to answer?

Design and evaluate a high-temperature, electrically isolated silicon-on-insulator gate driver integrated circuit capable of operating alongside silicon carbide power devices at temperatures up to 225°C.

January 12, 2012IEEE Transactions on Power Electronics

High-Temperature Silicon-on-Insulator Gate Driver for SiC-FET Power Modules

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Authors

JVJavier Valle-MayorgaTexas Instruments (United States)CGCaleb P. GutshallUniversity of Arkansas at Fayetteville KPKhoa M. PhanUniversity of Arkansas at Fayetteville

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Implication

Experimental evaluation demonstrates reliable 225°C operation in an isolated silicon-on-insulator gate driver, suggesting potential for compact, heat-resilient silicon carbide power modules.

Key Points

Design and evaluate a high-temperature, electrically isolated silicon-on-insulator gate driver integrated circuit capable of operating alongside silicon carbide power devices at temperatures up to 225°C.
Fabricated the isolated gate driver integrated circuit using a 1 μm, partially depleted silicon-on-insulator CMOS fabrication process.
Integrated an on-chip transformer to provide galvanic isolation between the low-voltage primary control side and the high-voltage secondary output side.
Bench-tested the integrated circuit under extreme thermal conditions at 225°C and a switching frequency of 200 kHz.
Demonstrated stable switching operation at 200 kHz under extreme thermal stress of 225°C.
Achieved common-mode transient noise immunity of at least 45 kV/μs during high-temperature operation.

Cite This Study

Valle-Mayorga et al. (2012) studied this question.

synapsesocial.com/papers/6aa682f56cd58dd9e9f4e423 https://doi.org/10.1109/tpel.2011.2182213

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Implication

Experimental evaluation demonstrates reliable 225°C operation in an isolated silicon-on-insulator gate driver, suggesting potential for compact, heat-resilient silicon carbide power modules.

High-Temperature Silicon-on-Insulator Gate Driver for SiC-FET Power Modules

Discussion

Member takes

Implication

Key Points

Cite This Study

High-Temperature Silicon-on-Insulator Gate Driver for SiC-FET Power Modules

Discussion

Member takes

Implication

Key Points

Cite This Study

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