In this study, a compact model proposed in the previous work (2) was utilized to elucidate an unusual minority carrier response time observed in MOS(p) devices with Al 2 O 3 /SiO 2 gate stacks. It is supposed that the number of oxide charges increases with SiO 2 thickness. The findings confirmed the heightened sensitivity of device alternating current (AC) characteristics to oxide charges in the outer region. Accordingly, we explored the dependencies of oxide thickness and quality on the transition frequency (ω m ) of devices.
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Kao et al. (2024) studied this question.
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