Edge-on-irradiated silicon detectors are currently being investigated for use in full-body photon-counting computed tomography (CT) applications. The low atomic number of silicon leads to a significant number of incident photons being Compton scattered in the detector, depositing a part of their energy and potentially being counted multiple times. Even though the physics of Compton scatter is well established, the effects of Compton interactions in the detector on image quality for an edge-on-irradiated silicon detector have still not been thoroughly investigated.
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Grönberg et al. (2024) studied this question.
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