Solar-Blind Ultraviolet Anisotropic Polarization Detection by β-Ga₂O₃ Based Schottky Photodiodes

β-Ga 2 O 3 is expected to achieve polarization detection in the solar-blind ultraviolet due to its ultra-broad bandgap and anisotropic crystal structure. In this work, we theoretically analyze the physical mechanism of β-Ga 2 O 3 to achieve polarization detection from the probabilities of electron transition. The β-Ga 2 O 3 photodetector with a Schottky photodiode structure has a maximum responsivity of 1.1 A/W and a detectivity rate of 3.08×10 2 . The polarization detection performance of different crystalline planes was compared, and the polarization sensitivity of the (001) surface is stronger, with an anisotropic polarized photocurrent ratio (PR) of 5.8. This work is expected to contribute to the further development of β-Ga 2 O 3 solar-blind ultraviolet polarization detectors.