Intrinsic Anomalous Hall Effect Arising from Antiferromagnetism as Revealed by High-Quality NbMnP

The anomalous Hall effect (AHE) in antiferromagnetic (AF) materials arises from symmetry breaking, which is equivalent to that in ferromagnets. This suggests that the AHE is induced by the intrinsic mechanism of the band-structure effect, which in turn induces dissipationless transverse conductivity. Confirmation of impurity-insensitive anomalous Hall conductivity (AHC) is crucial to this interpretation; however, experimental investigations of the dissipationless AHC for AF materials have been limited by a lack of high-quality samples. In this study, we demonstrated that the AF material NbMnP, which exhibits a large AHE, offers high-quality single crystals. Our findings clearly reveal that the large AHC and small net magnetization of ∼10−3 μB/Mn are inherent in this material, irrespective of disorder. NbMnP is a novel AF material that generates FM responses in regimes with reduced impurity scattering.