A theoretical analysis to reveal the prospects of MoS2 as a back surface field layer in TiS3-based near infrared photodetector

In this article, a photodetector based on TiS 3 absorber material, featuring a narrow direct bandgap of 1 eV, has been simulated. Throughout this research, the J-V (current–voltage) curves and spectral responses have been explored by systematically varying the thickness, doping concentration, and defect density of specific layers. The J SC (short circuit current) and V OC (open circuit voltage) of the heterostructure photodetector are found to be 45.77 mA cm −2 and 0.693 V respectively. Also, the responsivity (R) and detectivity (D * ) are 0.81 A W −1 and 2.19 × 10 14 Jones at a light wavelength of 1100 nm. The spectral response exhibits significantly elevated values within the wavelength range of 800 nm to 1200 nm, indicating the device’s ability to detect light in the near-infrared (NIR) region effectively. The novel research offers valuable insights, emphasizing the material’s suitability for photodetector (PD) applications and signaling a promising direction for further research interest in photodetector development.