Analysis of high resistive conduction mechanism in HfO₂-based ReRAM devices

This paper investigates the conduction mechanism in HfO <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> -based ReRAM devices during the High Resistance State (HRS). Our approach involves analyzing the experimental response of devices with different areas. Two parameters associated with the conduction mechanism are identified. Further, after the fitting, we can quantify the variability in the electrical response by using the relative standard deviation (RSD). Finally, an expression of the current state of HRS is proposed. It is consistent with the Quantum Point Contact Model (QPC) principles, furnishing a robust theoretical foundation elucidating the observed behavior. This work contributes to a deeper understanding of ReRAM operational dynamics during the HRS, bridging experimental insights with theoretical models.