Van der Waals multiferroic tunnel junctions (vdW-MFTJs) with multiple nonvolatile resistive states are highly suitable for new physics and next-generation storage electronics. However, currently reported vdW-MFTJs are based on two types of materials, i.e., vdW ferromagnetic and ferroelectric materials, forming a multiferroic system. This undoubtedly introduces additional interfaces, increasing the complexity of experimental preparation. Herein, we engineer vdW intrinsic MFTJs utilizing bilayer VS₂. By employing the nonequilibrium Green's function combined with density functional theory, we systematically investigate the influence of three types of electrodes (including non-vdW pure metal Ag/Au, vdW metallic 1T-MoS₂/2H-PtTe₂, and vdW ferromagnetic metallic Fe₃GaTe₂/Fe₃GeTe₂) on the electronic transport properties of VS₂-based intrinsic MFTJs. We demonstrate that these MFTJs manifest a giant electrode-dependent electronic transport characteristic effect. Comprehensively comparing these electrode pairs, the Fe₃GaTe₂/Fe₃GeTe₂ electrode combination exhibits optimal transport properties, the maximum TMR (TER) can reach 10949% (69%) and the minimum resistance-area product (RA) is 0.45 Ω m², as well as the perfect spin filtering and negative differential resistance effects. More intriguingly, TMR (TER) can be further enhanced to 34 000% (380%) by applying an external bias voltage, while RA can be reduced to 0.16 Ω m² under the influence of biaxial stress. Additionally, considering the impact of surface dangling bonds of pure metal electrodes on the multiferroicity of VS₂, we introduce a graphene interlayer between them. This strategy effectively preserves the intrinsic properties of VS₂ and significantly amplifies the TMR (TER) of the MFTJ composed of Ag/Au electrode pairs by an order of magnitude. Our proposed concept of designing vdW-MFTJs using intrinsic multiferroic materials points towards new avenues in experimental exploration.
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Yan et al. (2024) studied this question.
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