Analysis of Serial Adder Using FinFET Based GDI Technique

This study examines how Fin Field-Effect Transistor (FinFET) and Gate Diffusion Input (GDI) can be combined to construct serial adders to improve digital circuit performance and energy efficiency. Serial adders are crucial to digital math processes, but they struggle to meet modern integrated circuits' power, space, and delay constraints. We are investigating how FinFET technology, which controls channel conductivity and leakage currents better, and the GDI approach, which uses less power and area, can tackle these issues. This study compares the performance of FinFET-based GDI serial adders to those constructed with regular CMOS and GDI methods without FinFETs.The study tests the design's power efficiency, speed, and silicon area use under various operating situations using modern modeling tools. Early results show that FinFET-based GDI is more energy-efficient and smaller than current techniques. It accelerates computations without slowing them. These findings suggest a technique to develop smaller, more efficient digital circuits to fulfill the growing demand for highperformance, low-power computers. Future study will examine how to scale up and adapt the FinFET-based GDI approach to new semiconductor technologies and more complex number systems. This study improves semiconductor design and sets the framework for energy-efficient digital circuit research.