Studies on Structural and Electrical Characterization of Nitrogen Doped SiC Thin Films

The studies on structural and electrical characterization of a nitrogen doped SiC (n-SiC) film is prepared at 350∘ C using RF Magnetron sputtering method (PVD) on silicon (100) substrate is discussed in this paper. Nitrogen is used as dopant. The structural and electrical characterization of n-SiC thin films are studied using X-Ray diffraction, Field Emission Scanning Electron Microscope, Energy Dispersive X ray spectroscopy and four probe method. The XRD patterns of n-SiC thin film showed an increase in average crystallite size and decrease in internal strain. FESEM analysis shows the spherical grains with grain size of 38 nm to 138 nm for undoped and 39.73 nm to 148.716 nm for n-SiC thin films. The EDX analysis of SiC thin films shows the (1:1) stoichiometry between Si and C elements in SiC thin film. Improved electrical properties are observed in the n-SiC thin films and theses thin films can be used for sensor applications.