Efficient spin-orbit torque magnetization switching with low current density in crystalline ferromagnetic semiconductor

We explore spin-orbit-torque (SOT) magnetization switching in a crystalline (Ga,Mn)(As,P) ferromagnetic semiconductor film exhibiting perpendicular anisotropy. The switching phenomenon is investigated using Hall resistance (HR) hysteresis observed during current-scan measurements. The chirality of magnetization switching, as reflected by HR hysteresis loops, is consistent with the SOT generated by the current-induced Rashba- and Dresselhaus-type spin-orbit fields (SOFs) in the tensile-strained (Ga,Mn)(As,P) film. The critical current exhibits a systematic reduction as the temperature increases, reaching a minimum value of J ~ 4×10 3 A/cm 2 at 65 K. The achievement of such low critical current density obtained by SOT magnetization switching in a single ferromagnetic layer suggests promising prospects for developing novel, energy-efficient spintronic devices.