In order to study the photoelectric emission performance of distributed Bragg reflector structure on GaAs photocathodes, a reflective GaAs photocathode with a buffer layer of distributed Bragg reflector structure was designed and grown. The samples were subjected to optical property testing, chemical cleaning, high-temperature purification, and Cs/O activation. Finally, the photoelectric emission efficiency of GaAs photocathodes with distributed Bragg reflector structure was measured. By comparing with traditional reflection-mode GaAs photocathodes, it was found that the introduction of DBR structure makes the optical performance and quantum efficiency of GaAs photocathodes completely different from traditional structures. Through the reasonable design of DBR structure, the absorption efficiency of specific wavelength incident light in the photocathode body can be improved. In addition, the preparation process including cleaning and activation was implemented. Combined with improved preparation technology, the emission efficiency of the photocathode can be improved.
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Feng et al. (2024) studied this question.
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