Modeling and simulation of the ion implantation metrology based on pump-probe technology

The photomodulated optical reflectance (PMOR) technology has shown excellent performance in measuring the sample's doping profile and annealing uniformity after ion implantation. However, during PMOR detection, the physical process of interaction between laser and material can be quite complex. Therefore, it is significant to study a complete physical model of ion implantation measurement for the measurement accuracy of the doping profile. In this study, we have developed a comprehensive physical model that combines physical models for the generation and detection of excess carriers and excess temperature. For the samples with the same doping concentration and different junction depths, the finite element simulation results can distinguish three different doping profiles, which verifies the feasibility of the model in monitoring the doping profile. This study provides theoretical support for the measurement of the doping profile after ion implantation.