Microscopic insights into metal diffusion and ohmic contact formation in delta-doped GaAs/(Al,Ga)As core/shell nanowires

Irene Ayuso-Pérez; E. Luna; Alessandra da Silva; Daniel Ruhstorfer; Margarita Matzeck; Gregor Koblmüller; Roman Engel‐Herbert

doi:10.1088/1361-6528/ad449b

April 29, 2024NanotechnologyOpen Access

Microscopic insights into metal diffusion and ohmic contact formation in delta-doped GaAs/(Al,Ga)As core/shell nanowires

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Key Points

Ohmic contact formation in modulation-doped nanowires correlates directly with metal diffusion profiles across the protective shell into the conductive core region.
Scanning transmission electron microscopy, energy dispersive x-ray spectroscopy, and electron tomography resolve the microstructure of core/shell interfaces.
Insights into nanoscale contact interfaces may enable reproducible fabrication of low-resistance electronic channels hosting a two-dimensional electron gas.

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Implication

Microscopic investigation reveals contact formation mechanisms in modulation-doped semiconductor nanowires, highlighting strategies to optimize low-resistance electronic interfaces.

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Ayuso-Pérez et al. (2024) studied this question.

synapsesocial.com/papers/68e6d197b6db64358764f24f https://doi.org/10.1088/1361-6528/ad449b

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Microscopic insights into metal diffusion and ohmic contact formation in delta-doped GaAs/(Al,Ga)As core/shell nanowires

Key Points

No abstract yet

Implication

Discussion

Cite This Study

Microscopic insights into metal diffusion and ohmic contact formation in delta-doped GaAs/(Al,Ga)As core/shell nanowires

Key Points

No abstract yet

Implication

Discussion

Cite This Study

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