Enhanced Performance of AlGaN-Based DUV-LEDs With Passivated Nano-Hole Arrays

In this study, AlGaN-based deep ultraviolet light-emitting diodes (DUV-LEDs) with 0, 3 <tex-math notation="LaTeX">×</tex-math> 3, and 3 <tex-math notation="LaTeX">×</tex-math> 5 passivated nano-hole arrays have been fabricated, and their photoelectric and thermal performance have been analyzed. The measured results indicate that the leakage current could be ignored in the DUV-LEDs with passivated nano-hole arrays, and the resistance of the DUV-LEDs decreases as the number of passivated nano-holes increases. In addition, the DUV-LEDs with 3 <tex-math notation="LaTeX">×</tex-math> 5 passivated nano-hole arrays present the highest external quantum efficiency (EQE), which is 13.3% higher than that of the standard DUV-LEDs, due to the synergistic effect of etching damage and enhanced light extraction efficiency (LEE). Moreover, the room temperature EQE of these DUV-LEDs has been analyzed with the ABC <tex-math notation="LaTeX">$+$</tex-math> f ( n ) model. Finally, the results of thermal resistance and surface temperature distribution of these DUV-LEDs indicate that there is little impact on the thermal performance of the device with passivated nano-hole arrays.