Resonant interlayer coupling in NbSe₂-graphite epitaxial moir{\'e} superlattices

Moir{\'e} heterostructures, created by stacking two-dimensional (2D) materials together with a finite lattice mismatch or rotational twist, represent a new frontier of designer quantum materials. Typically, however, this requires the painstaking manual assembly of heterostructures formed from exfoliated materials. Here, we observe clear spectroscopic signatures of moir{\'e} lattice formation in epitaxial heterostructures of monolayer (ML) NbSe₂ grown on graphite substrates. Our angle-resolved photoemission measurements and theoretical calculations of the resulting electronic structure reveal moir{\'e} replicas of the graphite π states forming pairs of interlocking Dirac cones. Interestingly, these intersect the NbSe₂ Fermi surface at the k-space locations where NbSe₂'s charge-density wave (CDW) gap is maximal in the bulk. This provides a natural route to understand the lack of CDW enhancement for ML-NbSe₂/graphene as compared to a more than four-fold enhancement for NbSe₂ on insulating support substrates, and opens new prospects for using moir{\'e} engineering for controlling the collective states of 2D materials.