Data interfaces are widely used and transmission rates are increasing, which puts higher demands on the interface Electro Static Discharge (ESD) protection. In this paper, a TVS device with Ultra-Low-Capacitance DDSCR (ULCDDSCR) structure is proposed. The structure is based on a Dual Direction SCR (DDSCR) structure design, which reduces the barrier capacitance formed by the injected trap while preventing leakage from occurring in the device by increasing the injection of the N-type trap region once. Suitable process and structural parameters are obtained through simulation analysis.
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Wang et al. (2024) studied this question.
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