Ultrashallow heavily constrained quantum wells: The cradle for fully electrically controlled and microwave coupled quantum bits

The study focuses on the systematic growth and characterization of material properties, as well as the low-temperature transport properties, of ultrashallow heavily strained quantum wells. A new characterization method, called Density of Stress Accumulation Points, has been introduced for assessing quantum well strain. An ultrashallow heavily constrained quantum well with a remarkable mobility of 3.382×{}105 cm²/Vs was successfully achieved. This achievement serves as the foundation for the development of fully electrically controlled and microwave cavity-coupled quantum dot materials.