Hexagonal Ge / Si 0.25 Ge 0.75 quantum wells: Prediction of quantization and light-emission strength

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Investigation shows electron and hole confinement mechanisms in hexagonal Ge quantum wells, suggesting implications for light emission.

Heterostructures demonstrate significant differences in charge carrier types and their confinement based on well thickness.
The study identifies a correlation between band alignment and crystallographic orientation in hexagonal Ge quantum wells.
Analysis employs density functional theory to derive confinement energies and optical transition strengths across varying external strains.
Further refinement of designs may enhance emission properties by optimizing well structures and understanding strain effects.

Belabbes et al. (2025) studied this question.

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