In this work, we investigate the effect of strong disorder on BixTeI thin films, revealing a metal-insulator transition that depends on composition and the growth temperature. Understanding how disorder can be used as a parameter to alter the electronic properties of a material goes beyond the conventional understanding of crystalline material conductivity. This study therefore highlights the role of strong localization in disordered materials in shaping emerging quantum properties.
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Corbae et al. (2024) studied this question.
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