Optimization of Different III-V Multiple Quantum Well Solar Cells with Surficial Circular Nanoholes

Multiple quantum well solar cells (MQWSC) enhance the absorption of sunlight by allowing tunable bandgaps and improved carrier collection. This design aims to increase overall solar cell efficiency by optimizing energy conversion processes. Surficial photonic design is another approach to provide roughness which prevents reflection of sunlight from the solar cell surface and increases the optical paths of photons to reach the absorber layer. This article is focused on determining sui TableIII–V materials with structure configurations to implement in quantum wells to maximize efficiency beyond the fundamental p-n junction solar cells. Also, surficial circular nanoholes were considered to be implemented for maximizing light absorption. A total of six reported III-V semiconductor materials InP, InGaP, AlGaAs, GaSb, InGaAs, and InGaN were considered to be implemented on quantum wells. 5 layers and 25 layers of arrangements of each III-V material were investigated. Finally, the highest-performing MQWSC was incorporated with the optimized surficial nanostructure design, and the structure's performance was compared with a fundamental single junction solar cell. GaAs solar cell is considered in this study as the host structure to implement quantum wells and surficial structure. Optical simulation was conducted to investigate light trapping enhancement using the Ansys Lumerical FDTD software. GaAs solar cells with a single junction as well as MQWSC were examined using the Ansys Lumerical CHARGE solver. It was found that the 25 layers of InP/GaAs MQWSC obtained the highest efficiency among all six III-V materials and their two physical combinations. Finally, the surficial circular nanohole design was incorporated with the highest efficient multiple-quantum well combination to obtain electrical results. The analysis shows that the 25 layers of InP/GaAs MQWSC with circular nanoholes improve the efficiency significantly from fundamental single junction GaAs solar cells. Other electrical parameters of the final design including short circuit current, open circuit voltage and fill factor hold the highest value or close to the highest value compared to the other investigated designs. The results also compared with some reported works and a notable improvement was found. This optimized design will help to construct an efficient thin-film photo voltaic device.