Technology for 200 mm SiC Crystals and Substrates

SiC power device technology has over the past years continued to gain massive interest in automotive and industrial applications. The majority of devices are today fabricated on 150 mm diameter substrates while the 200 mm diameter substrates still is at early stage in both development and in terms of mass production. At STMicroelectronics we are an early adopter of 200 mm substrates since the first substrate was demonstrated in 2021. Development of 200 mm device quality substrates have progressed well and defect density are today in same range as for 150 mm substrates. In this paper, we report the latest progress on STMicroelectronics 200 mm diameter crystals and substrates and the next steps we are taking to push the limits of the SiC crystal and substrate technology.