Threshold selectors are essential components to enable high density and BEOL compatible non-volatile memory. Breakthroughs at the material and device level are necessary to employ this technology in low voltage logic chips. In this paper, we review the development of low voltage selectors based on the SiNGeCTe (SNGCT) amorphous chalcogenide material. SNGCT devices exhibit excellent stability and performance along with low switching voltage and low leakage characteristics. Finally, the selector integration with STT-MRAM memory is described, showing remarkable device performance.
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Ambrosi et al. (2024) studied this question.
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