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April 17, 2024Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and PhenomenaOpen Access

Effects of high-temperature annealing on vacancy complexes and luminescence properties in multilayer periodic structures with elastically strained GeSiSn layers

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Authors

ВТВ.А. ТимофеевISI. V. SkvortsovVMV. I. Mashanov

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Тимофеев et al. (2024) studied this question.

synapsesocial.com/papers/68e6ead2b6db643587666562https://doi.org/10.1116/6.0003557
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Also Consider

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  5. 5Si‐Ge‐Metal Ternary Phase Diagram Calculations1990 · 63 citations