An Investigation of Cu/Ni/Ga Interfacial Reaction with Different Ni/Ga Ratio

In this article, we utilized electroplating method forming Cu/Ni/Ga structure. Interfacial reaction was investigated with different ratio of Ni: Ga 7:3 and 1:20. The result showed that Ga reacted with the substrates immediately as plated forming NiGas and CuGa2 compound respectively in different ratio of Ni: Ga. IMCs transformed into Ni <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> Ga <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</inf> and Cu <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">31.3</inf> Ga <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">16.3</inf> respectively after 300°C heat treatment. This research explored a new optimizing idea in developing Ga TLP bonding technology.