Verification of resolution considering process margins for the l0μm pitch patterning of organic substrates

In recent semiconductors, packages play an important role in terms of cost and performance. And the SAP process, a manufacturing method, has a cost advantage, and it is important to have an index that extends the process margin of the SAP process. In this paper, we prepared two lenses with different resolving power, patterning at 5μm L/S and 3.5μm and 6.5μm L/S, and compared the process margin in the SAP process. As a result, the process margins at 3.5μm and 6.5μm L/S, which are assumed to be used in SAP, were found to be 1.4 times wider than the improvement estimated for 5μm L/S. This is due to the effect of NA and the improved flatness of the Bossung curve. These results indicate that optimization of NA is effective in increasing the SAP process margin beyond that predicted by only NA.