Novel dry film photoresist demonstrates ultra-fine wiring formation in semiconductor packages, suggesting advancements in process optimization.
We have developed a novel dry film photoresist capable of forming ultra-fine wiring for advanced semiconductor packages. Using laser direct imaging exposure, we successfully formed post-development patterns with line and space, L/S = 1.2 μm/1.2 μm (1:1) and L/S = 1.0 μm/3.0 μm (4 μm pitch). Furthermore, we also succeeded in forming copper wiring patterns after electrolytic plating with L/S = 1.5 μm/1.5 μm. As far as we know, these results are the most outstanding for ultra-fine pitch and they can contribute to the future production of 2.xD panel-level packages.
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Sakii et al. (2025) studied this question.
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