Transfer‐Stacked and Pre‐Tunable Bilayer Photoresist for High‐Yield Dry Lift‐off and Multiscale Patterning

Photolithography, a cornerstone of semiconductor manufacturing, faces persistent challenges in lift-off processes, particularly regarding solvent usage, sidewall adhesion, and limited pattern fidelity. While dry lift-off and bilayer resist schemes provide promising alternatives, conventional approaches often rely on multiple materials and exhibit uncontrollable undercut profiles. Here, we report a universal bilayer photoresist strategy that uses a single material and enables solvent-free, high-yield dry lift-off. By integrating surface modification and UV pre-exposure (222 nm), our method allows precise control of the undercut structure and maintains full compatibility with subsequent processes such as sputtering and dry lift-off. Experiments demonstrate robust multiscale patterning capability, achieving from wafer-scale down to 17 nm features, with a 100% yield, high density (line width: spacing = 5:4), and clean sidewalls without residue. This strategy also enables high-resolution quantum dot patterning and is compatible with the fabrication of pixelated perovskite micro-LEDs, highlighting its potential for optoelectronic applications including displays, optical encryption, and anti‑counterfeiting.