Recent developments in photovoltaic technology have led to a concentrated investigation of kesterite materials as potential substitutes for conventional silicon-based photovoltaics. Out of these materials, CZTS is notable, especially when used in thin film photovoltaic devices. This article thoroughly explores a CZTS quantum well structure using Silvaco technology for computer-aided design. The research explores different factors essential for enhancing device performance, such as efficiency, electric field distribution, recombination rates, and quantum efficiency. Furthermore, the study also investigates the influence of defect concentration in the quantum well area and changes in device thickness. Through an analysis of these factors, the study offers valuable insights into the behaviour of CZTS-based photovoltaic devices and provides strategies for improving their performance. Moreover, the research examines the impact of Gaussian and tail defect distributions, revealing how the device responds to various defect types. This analysis helps create effective strategies to reduce the negative impact of defects on device performance. This study enhances our comprehension of the capabilities of CZTS quantum well structures in thin film photovoltaics and sets the stage for future progress in this field.
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Anthony et al. (2024) studied this question.
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