Triple Bands Power VCO Based on Transformer-Tank For mm-Wave Application Using 130nm Technology

This manuscript introduces a triple-band power VCO constructed using the complementary PMOS-NMOS (Colpitts) architecture, and it is further based on the transformer tank technique. The proposed design operates in mm-wave and fifth-generation applications, utilizing 130 ~nm technology. The triple bands are switched by controlling the secondary varactor capacitor (CS). The suggested voltage-controlled oscillator (VCO), followed by a common source amplifier, aims to enhance the output power (P_out ) in dBm. The proposed power VCO delivers an P_out of 5.1dBm at 35.33GHz. The suggested interleaved square-shaped on-chip transformer exhibits a coupling factor greater than 0.72, along with a substantial quality factor $(Q)$ of 17.8 and 13.6 for the primary and secondary, respectively. The inductances for the primary and secondary are 145 and 289pH. The proposed power Voltage-Controlled Oscillator (VCO) operates in a frequency band between 27.43GHz and 35.33GHz and exhibits a phase noise @ 1MHz offset equal to -105 dBc / Hz. The Figure of Merit (FoM) is -187 dBc / Hz, and the peak achieved P_out is 5.1dBm. Finally, the power VCO's die size is 0.11 ~mm², while the whole chip size is 0.27 mm².