We demonstrated a highly efficient silicon microring modulator integrated with high-mobility titanium-doped indium oxide/hafnium oxide/silicon MOSCAP. It achieved a low V <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">π</inf> •L of 0.12 V•cm and low driving voltage (Vpp) of 0.8V, resulting in 25 Gb/s open eye with 53 fJ/bit energy efficiency.
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Hsu et al. (2024) studied this question.
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