We present an optically-pumped GeSn slab waveguide laser directly integrated on silicon substrates. Our laser design uses a Si ridge structure on the GeSn active layer to support guiding modes and achieve excel optical confinement. Lasing action was achieved under optical pumping up to T=90 K with an emission wavelength of 2254 nm and a threshold of 170 kW/cm 2 .
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Huang et al. (2024) studied this question.
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