Investigation of Q degradation in low-loss Si₃N₄ from heterogeneous laser integration

This is the authors' abstract. We don't add key points for this paper.

Qs above 10 8 have been demonstrated in CMOS-foundry-fabricated microresonators, but preserving the low loss during heterogeneous integration of III-V lasers has proven difficult. Here, Si <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</inf> N <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">4</inf> resonator Qs are measured between laser backend processing steps, showing loss increases from certain steps and low-loss restoration after annealing.