We report distinct breakdown mechanisms in CVD monolayer MoS2 FET devices for the first time mediated by either voltage or currents in devices. A detailed analysis of the breakdown physics explains the operational effects led shortcomings expected in downscaled devices. Operating short channel TMDs devices would be tricky owing to the dipole moment making it imperative to address the piezoelectric response related drifts in search of reliable performance. The electrical performance evolution was analyzed from turning ON of device till breakdown under stresses and effects on devices are found to be residual which would impair reliable functioning of nm-scale devices.
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Patbhaje et al. (2024) studied this question.
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