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Total-ionizing-dose (TID) irradiation-induced charge trapping and reliability issues in 3D devices and ICs are reviewed. Strong layer-to-layer coupling of TID response in sequential integrated (3DSI) devices results from positive charge trapping in the intermediate dielectric layer that underlies top-layer devices. Effects of radiation-induced charge trapping are illustrated for FDSOI ring oscillators fabricated in the same technology. Similar charge coupling effects are demonstrated in IGZO memory structures, emphasizing the generality of these effects in candidate 3D semiconductor technologies.
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Zhang et al. (2024) studied this question.
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